30-band k⋅p method for quantum semiconductor heterostructures
نویسندگان
چکیده
منابع مشابه
Development of an eight-band theory for quantum-dot heterostructures
We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantumdot heterostructures (QDHs) in Burt’s envelope-function representation. The 8×8 radial Hamiltonian and the boundary conditions for the Schrödinger equation are obtained for spherical QDHs. Boundary conditions for symmetrized and nonsymmetrized radial Hamiltonians are compared with each other and with connection rules that a...
متن کاملA Proposal for a New Method of Modeling of the Quantum Dot Semiconductor Optical Amplifiers
With the advancement of nanoscale semiconductor technology,semiconductor optical amplifiers are used to amplify and process all-optical signals. Inthis paper, with the aim of calculating the gain of quantum dot semiconductor opticalamplifier (QD-SOA), two groups of rate equations and the optical signal propagatingequation are used in the active layer of the device. For t...
متن کاملMacroscopic Models for Semiconductor Heterostructures
The semiconductor Boltzmann equation is considered within a material with a space-dependent band characteristic. Its uid limit under strong elastic collisions leads to the so-called Spherical Harmonics Expansion (SHE) model. For this model, the innuence of smoothly space-dependent or abruptly dis-continuous band characteristics is analyzed. For the latter case which occurs at heterojunction int...
متن کاملProbing a topological quantum critical point in semiconductor-superconductor heterostructures
Sumanta Tewari,1 J. D. Sau,2 V. W. Scarola,3 Chuanwei Zhang,4 and S. Das Sarma2 1Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, USA 2Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA 3Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA 4Depar...
متن کاملSemiconductor nanowire heterostructures.
Recent progress on the synthesis and characterization of semiconductor nanowire heterostructures is reviewed. We describe a general method for heterostructure synthesis based on chemical vapour deposition and the vapour-liquid-solid growth of crystalline semiconducting nanowires. We then examine examples of nanowire heterostructures for which physical properties have been measured, considering ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3600643